Optoelectronic semiconductor component

ABSTRACT

An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

RELATED APPLICATIONS

This is a '371 of International Application No. PCT/EP2011/059738, withan international filing date of Jun. 10, 2011 (WO 2011/160968 A1,published Dec. 29. 2011, which is based on German Patent Application No.10 2010 024 864.9 filed Jun. 24, 2010, the subject matter of which isincorporated herein by reference.

TECHNICAL FIELD

This disclosure relates to an optoelectronic semiconductor component.

BACKGROUND

US 2006/0135621 A1 provides an optoelectronic component and a modulebased on the optoelectronic component. There is nonetheless a need toprovide an optoelectronic semiconductor component which exhibits highlight outcoupling efficiency.

SUMMARY

We provide an optoelectronic semiconductor component including a carrierwith a carrier top, at least one optoelectronic semiconductor chipmounted on the carrier top and comprising a main radiation side remotefrom the carrier top, at least one bonding wire, via which thesemiconductor chip is electrically contacted, at least one covering bodyon the main radiation side which projects beyond the bonding wire in adirection away from the carrier top and perpendicular to the mainradiation side, and at least one reflective potting compound whichlaterally encloses the semiconductor chip and extends from the corniertop a least as far as the main radiation side, wherein the bonding wireis covered completely by the reflective potting compound or completelyby the reflective potting compound together with the covering body.

We also provide an optoelectronic semiconductor component including acarrier with a carrier top, at least one optoelectronic semiconductorchip mounted on the carrier top and comprising a main radiation sideremote from the carrier top, at least one bonding wire via which thesemiconductor chip is electrically contacted, at least one covering bodyon the main radiation side which projects beyond the bonding wire in adirection away from the carrier top and perpendicular to the mainradiation side, and at least one reflective potting compound whichlaterally encloses the semiconductor chip and extends from the carriertop at least as far as the main radiation side, wherein the bonding wireis completely embedded in the reflective potting compound, the bondingwire is mounted on the semiconductor chip in an electrical connectionzone on the main radiation side, the electrical connection zone is freeof the covering body and completely covered by the reflective pottingcompound, the bonding wire extends in the connection zone parallel tothe main radiation side with a tolerance of at most 10°, and thecovering body is a disk and a thickness of the covering body is 50 μm to250 μm.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1 to 7 show schematic representations of examples of ouroptoelectronic semiconductor components.

DETAILED DESCRIPTION

Our optoelectronic semiconductor component may comprise a carrier with acarrier top. The carrier, for example, comprises a circuit board or aprinted circuit board, PCB for short. The basic material of the carrieron which, for example, electrical conductor tracks are mounted, may be aceramic such as an aluminium oxide or aluminium nitride. The carrier maylikewise be based on a metal or be a metal core printed circuit board.The carrier may moreover take the form of a “Quad-Flat No-LeadsPackage”, QFN for short.

The optoelectronic semiconductor component may comprise one or moreoptoelectronic semiconductor chips mounted on the carrier top. Thesemiconductor chips comprise main radiation side remote from the carriertop. Electromagnetic radiation, for example, visible light generated inthe semiconductor chips leaves the semiconductor chips predominantly orwholly via the main radiation side.

The semiconductor chips in particular are semiconductor chips based on aIII-V semiconductor material. For example, the semiconductor chips arebased on a nitride compound semiconductor material such asM_(n)In_(1-n)Ga_(m)N or on a phosphide compound semiconductor materialsuch as Al_(n)In_(1-n)Ga_(m)P, wherein in each case 0≦n≦1, 0≦m≦1 andn+m≦1. In addition, the material may comprise one or more dopants andadditional constituents. For simplicity's sake, however, only thefundamental constituents of the crystal lattice are indicated, i.e. Al,Ga, In, N or P, even if these may in part be replaced and/orsupplemented by small quantities of further substances. Theoptoelectronic semiconductor chips are preferably designed to generatevisible radiation, for example, in the blue, green, yellow and/or redspectral range when the semiconductor component is in operation.Radiation is generated in at least one active zone, which contains atleast one quantum well structure and/or at least one pn junction.

The semiconductor chip may be electrically contacted via at least onebonding wire, preferably via precisely one bonding wire. The bondingwire connects to the semiconductor chip on the main radiation side. inparticular the bonding wire connects a conductor track on the carriertop with a current spreading pattern on the main radiation side of thesemiconductor chip. Electrical contacts of the semiconductor chip arepreferably located on mutually facing major sides of the semiconductorchip.

The semiconductor component may comprise at least one covering bodymounted on the main radiation side of the semiconductor chip. Thecovering body may be restricted to the main radiation side or indeedproject beyond the semiconductor chip in a lateral direction, i.e. in adirection parallel to the main radiation side. Furthermore, the coveringbody projects beyond the bonding wire in a direction away from thecarrier top and perpendicular to the main radiation side. In otherwords, when viewed in a projection onto a plane perpendicular to themain radiation side, the bonding wire may lie wholly between the carriertop and the top of the covering body, which is remote from the carriertop.

The optoelectronic semiconductor component may comprise at least onereflective potting compound. The potting compound completely or partlyencloses the semiconductor chip in a lateral direction. When viewed fromthe carrier top, the potting compound extends at least as far as themain radiation side, for example, with a tolerance of at most 15 μm orof at most 5 μm. The reflective potting compound is preferably in directcontact with the semiconductor chip at least in places in the lateraldirection.

The bonding wire may be completely covered by the reflective pottingcompound or alternatively completely covered by the reflective pottingcompound together with the covering body. in other words, in a directionaway from the carrier top, the bonding wire does not project out of thereflective potting compound or out of the reflective potting compoundtogether with the covering body. The bonding wire is in particular notexposed at any point, i.e. in a direction perpendicular to and away fromthe carrier top every portion of the bonding wire is succeeded by amaterial of the reflective potting compound and/or a material of thecovering body.

The optoelectronic semiconductor component may comprise a carrier with acarrier top and at least one optoelectronic semiconductor chip mountedon the carrier top and which comprises a main radiation side remote fromthe carrier top. In addition, the semiconductor component includes atleast one bonding wire via which the semiconductor chip is electricallycontacted, and at least one covering body mounted on the main radiationside and which projects beyond the bonding wire, in a direction awayfrom the carrier top and perpendicular to the main radiation side. Atleast one reflective potting compound laterally encloses thesemiconductor chip and extends, when viewed from the carrier top, atleast as far as the main radiation side of the semiconductor chip. Thebonding wire is completely covered by the reflective potting, compoundor completely covered by the reflective potting compound together withthe covering body.

Such a reflective potting compound makes it possible to achieveradiation emission in particular solely at the main radiation side ofthe semiconductor chip, in addition, shading effects or undesiredreflections at the bonding wire may be reduced or prevented such thatthe efficiency of radiation outcoupling out of the semiconductorcomponent may be increased.

The bonding wire may be completely embedded in the reflective pottingcompound. In particular, the reflective potting compound encloses thewire in a form-fitting manner and is in direct contact with the bondingwire. The bonding wire is thus, for example, directly encapsulated bythe reflective potting compound. Completely embedded may mean that thebonding wire is solely in contact first with the reflective pottingcompound and/or second with electrical connection zones, with which thebonding wire is electrically conductively connected and to which thebonding wire is bonded, and/or third with an electrical connector, withwhich the bonding wire is fastened to the connection zones.

The reflective potting compound extends, when viewed from the carriertop, as far as the top of the covering body remote from the carrier top.In particular, the reflective potting compound terminates at a lateralboundary face of the covering body in a direction away from the carriertop, flush with or flush within the bounds of manufacturing toleranceswith the body top. Manufacturing tolerances amount to at most 10 μm, forexample.

The top of the covering body may be provided with a non-stick layer. Thenon-stick layer does not wet the material of the reflective pottingcompound. The non-stick layer consists of or comprises, for example, apolyhalogenolefin, in particular a fluorine-containing compound such aspolytetrafluoroethylene. Preferably, the non-stick layer is transparentto radiation generated directly in the semiconductor chip and/or toradiation generated in the covering body by wavelength conversion.

The top of the reflective potting body remote from the carrier top mayextend flush with and/or parallel to the top of the covering body,Tolerance with regard to flushness and/or parallelism amounts, forexample, to at most 30 μm or at most 10 μm in a direction perpendicularto the body top. The potting top may extend parallel to the carrier topwithin the bounds of manufacturing tolerances.

The carrier top, when viewed in plan view, may be covered completely bythe reflective potting compound together with the covering body. Inother words, every cordon of the carrier top may be succeeded by thematerial Of the potting compound and/or of the covering body in adirection perpendicular to and away from the carrier top. In particular,every portion of the carrier top is succeeded by either the material ofthe potting compound or the material of the covering body.

The main radiation side of the semiconductor chip may comprise anelectrical connection zone. The electrical connection zone may be a bondpad. In particular, in the connection zone the bonding wire is connectedelectrically and mechanically to the semiconductor chip. Thesemiconductor chip preferably has precisely one electrical connectionzone on the main radiation side. Starting from the connection zone,structures for current distribution may be located on the main radiationside, for example, narrow, metallic webs.

The electrical connection zone may be free of the covering body on themain radiation side. In other words, no covering body material succeedsthe connection zone in a direction away from the carrier top. Theconnection zone also preferably does not touch the covering body.

The electrical connection zone may be covered wholly or partly by thereflective potting compound on the main radiation side. Thus, in adirection perpendicular to and away from the main radiation side, everyportion of the connection zone is succeeded by a material of thereflective potting compound.

The bonding wire may extend in the electrical connection zone on themain radiation side, with a tolerance of at most 20° or of at most 10°,parallel to the main radiation side and/or parallel to the carrier topand/or parallel to the top of the covering body. Particularlypreferably, the bonding wire also extends around the electricalconnection zone in a region in the immediate vicinity thereof, parallelto the main radiation side. For example, the region in the immediatevicinity comprises a diameter which corresponds to at least twice or atleast five times the average diameter of the electrical connection zoneon the main radiation side.

The covering body may take the form of a wafer (also referred to as diskor plate) and is preferably limited to the main radiation side. In otherwords, the covering body extends further laterally than heightwise. Thefact that the covering body is limited to the main radiation side meansthat the covering body does not project laterally beyond the mainradiation side, with a tolerance, for example, of at most 50 μm or of atmost 15 μm. Taking the form of a wafer may additionally mean that twomajor sides of the covering body are oriented parallel to one anotherwithin the bounds of manufacturing tolerances.

The covering body may have a thickness of 50 μm to 250 μm, in particular50 μm to 120 μm.

The reflective potting compound may comprise a clear, transparent matrixmaterial, reflective particles being embedded in the matrix material.The particles are, for example, white and diffusely reflective. Thematrix material particularly preferably exhibits a Shore A hardness atroom temperature of at most 50 or of at most 40. In other words, thematrix material is comparatively soft.

The particles may comprise or consist of a particulate material which.is a metal oxide. The metal oxide is, for example, titanium dioxide.

The proportion by weight of the reflective particles, relative to thetotal reflective potting compound, may be 10% to 40%, in particular 20%to 30%.

A reflection coefficient of the reflective potting compound amounts forvisible radiation, for example, for radiation in the wavelength range of450 nm to 700 nm, to at least 85% or, preferably, at least 90% or atleast 93%.

The potting compound may appear white when the potting compound isviewed in plan view and in particular in a region around thesemiconductor chip. In other words, a concentration of the particles is,for example, established such that the potting compound gives anobserver the impression of a white colour.

The reflective potting compound may completely enclose the semiconductorchip all around when viewed in the lateral direction and is constructedform-fittingly with the lateral boundary faces of the semiconductorchip. Also preferably, the reflective potting compound likewise enclosesthe bonding wire and/or the covering body completely all around inform-fitting manner in the lateral direction.

The optoelectronic semiconductor component may comprise a housing with acavity, wherein the semiconductor chip, the covering body, the bondingwire and the reflective potting compound are each located in the cavityand wherein the semiconductor chip is mounted on the carrier top. inthis case, the reflective potting compound preferably extends, in alateral direction, from the semiconductor chip as far as lateralboundary faces of the cavity such that no air gap or no gap filled witha further material arises between the lateral boundary faces of thecavity and the semiconductor chip.

The reflective potting compound may wet the lateral boundary faces ofthe cavity. In other words, a concave meniscus may form at the lateralboundary faces and on manufacture of the semiconductor component thereflective potting compound may creep along the lateral boundary facesof the cavity away from the carrier top.

The thickness of the potting compound may be at least 50 μm and/or atmost 400 μm greater directly at the lateral boundary faces of the cavitythan directly at the semiconductor chip. in other words, it is possiblefor the reflective potting compound to form a paraboloidal reflector,wherein the thickness of the potting compound, with a tolerance of atmost 30 μm, increases constantly in a direction away from thesemiconductor chip. This is not hindered by the fact that acomparatively small meniscus of the potting compound may likewise formwithin the stated tolerance, for example, at lateral boundary faces ofthe covering body.

An optoelectronic semiconductor component described herein will beexplained in greater detail below by way of examples with reference tothe Drawings. Elements which are the same in the individual figures areindicated with the same reference numerals. The relationships betweenthe elements are not shown to scale, however, but rather individualelements may be shown exaggeratedly large to assist in understanding.

FIG. 1 is a schematic sectional representation of an example of anoptoelectronic semiconductor component 1. An optoelectronicsemiconductor chip 3 is mounted on the planar top 20 of a carrier 2. Thesemiconductor chip 3 comprises a main radiation side 30 remote from thecarrier 2. A coveting body 5 is mounted on the main radiation side 30,with a planar top 50 remote from the semiconductor chip 3. The covetingbody 5 takes the form of a wafer and has a thickness A of approx. 100μm, for example. The thickness C of the semiconductor chip is, forexample, 30 μm to 250 μm, in particular around approx. 120 μm, A portionin a corner of the main radiation side 30 in which an electricalconnection zone 7 a is located is not covered by the covering body 5.

Electrical contacting of the semiconductor chip 3 proceeds via a bondingwire 4, which extends from an electrical connection zone 71 on thecarrier top 20 as far as the connection zone 7 a on the main radiationside 30. In a region around the connection zone 7 a the bonding wire 4extends approximately parallel to the main radiation side 30, forexample, with a tolerance of at most 20°. in contrast to what is shownin FIG. 1, it is possible for the spacing between the bonding wire 4 andthe carrier top 20 to decrease constantly from the connection zone 7 atowards the connection zone 7 b, in particular if the connection zone 7a is constructed in the manner of a platform.

In the lateral direction a reflective potting compound 6 encloses thesemiconductor chip 3, the covering body 5 and the bonding wire 4 in aform-fitting manner. The bonding wire 4 is embedded completely in thereflective potting compound 6. The thickness T of the potting compound 6corresponds, for example, to a tolerance of at most 5% or of at most10%, to the total of the thicknesses A, C of the covering body 5 and ofthe semiconductor chip 3. Within the bounds of manufacturing tolerances,the to 60 of the potting compound 6 remote from the carrier 2 isoriented parallel to the carrier top 20 and to the body to 50 andterminates flush with the body top 50 within the bounds of manufacturingtolerances. The potting compound 6, for example, comprises a transparentsilicone or a transparent silicone-epoxy hybrid material in whichreflective particles, in particular of titanium dioxide, are embedded,The connection zone 7 a on the main radiation side 30 is coveredcompletely by the potting compound 6.

At lateral boundary faces of the covering body 5 a concave meniscus mayform on the top 60 of the potting compound 6 remote from the carrier 2.The top 50 of the covering body 5 is preferably provided with anon-stick layer 8 which prevents the body top 50 from being wetted bythe material of the potting compound 6. The thickness of the non-sticklayer 8 is, for example, 10 nm to 1 μm, in particular 25 nm to 200 nm,The non-stick layer preferably comprises a fluorinated material, forexample, a TEFLON®-like material.

The covering body 5 is adhesively bonded, for example, to the mainradiation side 30 or printed directly onto the main radiation side 30.Unlike in the illustration, a plurality of covering bodies, whichperform different functions and are, for example, transparent anddiffusely scattering or comprise a conversion medium, may succeed oneanother in a direction away from the carrier top 20. It is likewisepossible for the covering body 5 in each case to comprise on its top 50a roughened pattern for improving light outcoupling or to be provided,in addition to or as an alternative to the non-stick layer 8, with anantireflective coating or with a particularly hold coating resistant tomechanical stress.

Unlike in FIG. 1, it is possible, as also in all the other examples, forthe optoelectronic semiconductor chip 3 to be electrically contacted viatwo bonding wires 4 on the main radiation side 30 and for thesemiconductor chip 3 then to take the form of a “flip-chip”,

FIGS. 2A to 2E. are schematic, perspective representations of a methodof producing an example of the optoelectronic semiconductor component 1.

In FIG. 2A the carrier 2 is provided. The carrier 2 comprises electricalconnection zones 7 b, 7 c, 7 d on the carrier top 20. The connectionzones 7 b, 7 d are preferably connected by way of vias to electricalconductor tracks, not shown, on the bottom of the carrier 2,

According to FIG. 2B the plurality of semiconductor chips 3 are mountedon the connection zones 7 c, for example, by soldering or electricallyconductive adhesion. Protection diodes 11 providing protection againstelectrostatic discharge are mounted on the connection zones 7 d. Thesemiconductor chips 3 may be semiconductor chips of identicalconstruction or indeed different semiconductor chips, e.g. semiconductorchips emitting in different spectral ranges.

in FIG. 2C the bonding wires 4 a, 4 b connect to the connection zones 7a, 7 e of the semiconductor chip 3 and to the protection diode 11,starting from the connection zone 7 b on the carrier top 20. The bondingwires 4 a, 4 b are preferably first connected to the carrier top 20 andthen to the semiconductor chip 3 and to the protection diode 11.

In FIG. 2D, the covering bodies 5 a, 5 b are applied to thesemiconductor chips 3. The covering bodies 5 a are, for example, clear,transparent wafers, preferably of a thickness such that in a directionaway from the carrier 2, they terminate hush with the covering bodies 5b. The Covering bodies 5 b contain a conversion medium designed toconvert at least some of the radiation emitted by the semiconductorchips 3 into radiation of a different wavelength. For example, thesemiconductor chips 3 associated with the covering bodies 5 b emit bluelight and the semiconductor chips 3 associated with the covering bodies5 a emit blue light or red light. Alternatively, the semiconductor chips3 may each be semiconductor chips of identical construction. Coveringbodies 5 a, 5 b of identical construction may likewise be used.

FIG. 3 provides a more detailed illustration of the bonding wires 4 a, 4b, The covering bodies 5 a, 5 b project beyond the bonding wires 4 a, 4b in a direction away from the carrier top 20. The bonding wires 4 a, 4b comprise different radii of curvature over their course. Over theelectrical connection zone 7 b on the carrier top 20 the radius ofcurvature of the bonding wires 4 a, 4 b is in particular smaller than ina region close to the connection zone 7 a, 7 e on the sides of thesemiconductor chip 3 and the protection diode 11 remote from the carrier2.

In FIG. 2E, the semiconductor chips 3 and the covering bodies 5 a, 5 band the bonding, wires 4 a, 4 b are encapsulated by the reflectivepotting compound 6 and enclosed laterally. The covering bodies 5 a, 5 hand the potting compound 6 completely cover the carrier 2, in adirection away from the carrier top 20. The bonding wires 4 a, 4 b arecompletely embedded in the potting compound 6. The top 60 of the pottingcompound extends approximately parallel to the carrier top 20 and, withthe exception of concave menisci, which form at lateral boundary facesof the covering bodies 5 a, 5 b, is planar in shape and terminates flushwith the body tops 50.

The potting compound 6 makes it possible to prevent any radiation whichhas not passed through the covering bodies 5 b from leaving thesemiconductor chips 3 associated with covering bodies 5 b with theconversion medium. In this way particularly homogeneous spectralemission and high conversion efficiency may be achieved.

According, to FIG. 2E, the semiconductor component 1 may optionally besingulated into semiconductor components with in each case a pluralityof or in each case precisely one semiconductor chip 3.

FIG. 4 shows a further example of the semiconductor component 1 in asectional representation. Unlike in FIG. 1, the bonding wire 4 isembedded into the potting compound 6 together with the covering body 5.The reflective potting compound 6 extends, when viewed from the carriertop 20, only as far as the main radiation side 30. The covering body 5extends completely or substantially completely over the entire carriertop 20. The body top 50 is preferably planar in shape. The thickness Aof the covering body 5 is preferably 50 μm to 150 μm, The covering body5 is preferably clear and transparent. It is likewise possible for thecovering body 5 to contain a filter medium and/or a conversion medium,as also in all the other examples.

In the example according to FIGS. 5A to 5E, which show a productionprocess for a further example of the semiconductor component 1, as inFIGS. 2A to 2E, the carrier 2 comprises a housing 9 with a cavity 90.Lateral boundary faces 95 of the cavity 90 are oriented approximatelyperpendicular to the carrier top 20, on which the electrical connectionzones 7 b, 7 c, 7 d are mounted. The lateral boundary faces 95 have awetting effect relative to the reflective potting compound 6 such that areflector trough is formed by the top 60 of the reflective pottingcompound 6 when the cavity 90 is filled with said compound. The top 60of the potting compound is preferably paraboloidal in shape.

The lateral dimensions of the carrier 2 vary, for example, from 1 mm×2mm to 4 mm×8 mm, as also in all the other examples. The semiconductorcomponents 1 are thus of comparatively compact structure. Optionally,cylindrical recesses may be formed at corners of the housing 9 and ofthe carrier 2, which recesses constitute adjusting aids or mountingaids, for example.

A further example of the semiconductor component 1 with the housing 9 isillustrated in the schematic sectional representations according toFIGS. 6A to 6C. As in all the other examples, the top 60 of the pottingcompound is preferably not succeeded by any further potting compound.The top 60 of the potting compound in particular adjoins air.Alternatively, it is possible for an optical system, not shown in thefigures, for example, a lens, to be arranged over the top 60 of thepotting compound and/or over the housing 9.

FIG. 7 is a sectional representation of a further example of thesemiconductor component 1. To simplify the illustration, FIG. 7 does notshow the covering body and the bonding wire. A paraboloidal reflector isformed by the top 60 of the potting compound. At the lateral boundaryfaces 95 the potting compound 6 creeps upward during production. At thesemiconductor chip 3 the potting compound 6 has a thickness T1 and atthe lateral boundary faces 95 a thickness T2. The difference between thethicknesses T1, T2 is, for example, 50 μm to 400 μm or 75 μm to 300 μm.The lateral extent of the potting compound 6 between the lateralboundary faces 95 of the housing 9 and the semiconductor chip 3 amounts,for example, to 100 μm to 1 mm, in particular 150 μm to 500 μm, forexample. approx. 350 μm. The potting compound 6 is in direct contactwith the semiconductor chip 3 and with the lateral boundary faces 95. Atlateral boundary faces of the semiconductor chip 3 there may be locatedfillet-like pans of a connector with which the semiconductor chip 3 ismounted on the carrier 2.

FIG. 7 shows that the thickness T of the potting compound 6 mayinitially decrease slightly away from the semiconductor chip 3 and thenincrease again constantly towards the lateral boundary faces 95. Thedecrease in the thickness T, away from the semiconductor chip 3,preferably amounts to at most 30 μm or at most 20 μm and may beattributed to formation of a small concave meniscus at the semiconductorchip 3 or at the covering body. Beam shaping by the top 60 of thepotting compound is not affected or is barely affected by this localminimum thickness T of the potting body 6.

The component described herein is not restricted by the descriptiongiven with reference to the examples. Rather, the disclosure encompassesany novel feature and any combination of features, including inparticular any combination of features in the appended claims, even ifthe feature or combination is not itself explicitly indicated in theclaims or examples.

1.-14. (canceled)
 15. An optoelectronic semiconductor componentcomprising: a carrier with a carrier top, at least one optoelectronicsemiconductor chip mounted on the carrier top and comprising a mainradiation side remote from the carrier top, at least one bonding wire,via which the semiconductor chip is electrically contacted, at least onecovering body on the main radiation side which projects beyond thebonding wire in a direction away from the carrier top and perpendicularto the main radiation side, and at least one reflective potting compoundwhich laterally encloses the semiconductor chip and extends from thecarrier top at least as far as the main radiation side, wherein thebonding wire is covered completely by the reflective potting compound orcompletely by the reflective potting compound together with the coveringbody.
 16. The optoelectronic semiconductor component according to claim15, wherein the bonding wire is completely embedded in the reflectivepotting compound.
 17. The optoelectronic semiconductor componentaccording to claim 15, wherein the reflective potting compound extendsfrom the carrier top as far as the to of the covering body remote fromthe carrier top.
 18. The optoelectronic semiconductor componentaccording to claim 15, wherein the top of the covering body is providedwith a non-stick layer and the non-stick layer does not wet the materialof the reflective potting compound.
 19. The optoelectronic semiconductorcomponent according to claim 15, wherein a potting compound top remotefrom the carrier top extends, with a tolerance of at most 30 μm, flushwith and parallel to the top of the covering body.
 20. Theoptoelectronic semiconductor component according to claim 15, whereinthe carrier top, when viewed in plan view, is completely covered by thereflective potting compound together with the covering body.
 21. Theoptoelectronic semiconductor component according to claim 15, whereinthe bonding wire is mounted on the semiconductor chip in an electricalconnection zone on the main radiation side, and the electricalconnection zone is free of the covering body and is partly or completelycovered by the reflective potting compound.
 22. The optoelectronicsemiconductor component according to claim 15, wherein the bonding wireextends in the connection zone parallel to the main radiation side witha tolerance of at most 20°.
 23. The optoelectronic semiconductorcomponent according to claim 15, wherein the covering body is a waferand limited to the main radiation side, and a thickness of the coveringbody is 50 μm to 250 μm.
 24. The optoelectronic semiconductor componentaccording to claim 15, wherein the reflective potting compound comprisesa transparent matrix material and reflective particles embedded therein,and at room temperature the matrix material has a Shore A hardness of atmost
 50. 25. The optoelectronic semiconductor component according toclaim 24, wherein a particulate material from which the reflectiveparticles are formed is a metal oxide, and the proportion by weight ofthe particles in the reflective potting compound is 10% to 40%.
 26. Theoptoelectronic semiconductor component according to claim 15, whereinthe reflective potting compound encloses the semiconductor chip, thebonding wire and the covering body form-fittingly and completely allaround in the lateral direction.
 27. The optoelectronic semiconductorcomponent according to claim 15, further comprising a housing with acavity, wherein the semiconductor chip, the covering body and thereflective potting compound are arranged on the carrier top in thecavity, and the reflective potting compound extends from thesemiconductor chip as far as lateral boundary faces of the cavity. 28.The optoelectronic semiconductor component according to claim 27,wherein the reflective potting compound wets the lateral boundary facesof the cavity, and the thickness of the potting compound at the lateralboundary faces is at least 50 μm and at most 400 μm greater than at thesemiconductor chip.
 29. An optoelectronic semiconductor componentcomprising: a carrier with a carrier top, at least one optoelectronicsemiconductor chip mounted on the carrier top and comprising a mainradiation side remote from the earner top, at least one bonding wire viawhich the semiconductor chip is electrically contacted, at least onecovering body on the main radiation side which projects beyond thebonding wire in a direction away from the carrier top and perpendicularto the main radiation side, and at least one reflective potting compoundWhich laterally encloses the semiconductor chip and extends from thecarrier top at least as far as the main radiation side, wherein thebonding wire is completely embedded in the reflective potting compound,the bonding wire is mounted on the semiconductor chip in an electricalconnection zone on the main radiation side, the electrical connectionzone is free of the covering body and completely covered by thereflective potting compound, the bonding wire extends in the connectionzone parallel to the main radiation side with a tolerance of at most10°, and the covering body is a disk and a thickness of the coveringbody is 50 μm to 250 μm.